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2SC3750

NPN Transistor

Description

isc Silicon NPN Power Transistor 2SC3750 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM...

INCHANGE

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