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2SD325

NPN Transistor

Description

isc Silicon NPN Power Transistor 2SD325 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 1.5A ·Complement to Type 2SB511 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier appl...

INCHANGE

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