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2SD551

NPN Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Complement to Type 2SB681 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For AF power amplifier applications. ·Recommended for use in output stage of 80 watts power amplifier ....

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