isc Silicon NPN Power Transistor
2SD959
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 2A ·Complement to Type 2SB867 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching applica...
