isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min.) ·DC Current Gain-
: hFE = 2000(Min) @ IC= 1A ·Low Collector Saturation Voltage ·Complement to Type 2SB795 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·They are suitable for use to operate f...
