isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min.) ·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 2A ·Complement to Type 2SB1185 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOL...
