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2SD1773

Part Number	2SD1773
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min.) ...
Datasheet	2SD1773 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min.
) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max) @IC= 4A ·High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V ·Complement to Type 2SB1193 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation @...

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