isc Silicon NPN Power Transistor
BD303
DESCRIPTION ·DC Current Gain -
: hFE = 30(Min.)@ IC= 2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Complement to Type BD304 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages up to 25W, vertical
deflection circuits in co...
