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BD911

Part Number	BD911
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Volt...
Datasheet	BD911 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= 0.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·Complement to Type BD912 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 ICM Collector Current-Peak 20 IB Base Current 5 PC Collector Power Dissipation @ TC=25℃ 90 TJ Junction Temperature 150 Tstg Storage...

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