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BDX34C

Part Number	BDX34C
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 23, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor BDX34C DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -10...
Datasheet	BDX34C PDF File

Overview

isc Silicon PNP Darlington Power Transistor BDX34C DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Collector Saturation Voltage : VCE(sat)= -2.
5V(Max.
)@ IC= -3A ·Complement to Type BDX33C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -...

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