isc Silicon NPN Power Transistor
BDY39
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=25-100@IC = 4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.7V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high power AF output stages and in
stabilized pow...
