DatasheetsPDF.com

BDY55

NPN Transistor

Description

isc Silicon NPN Power Transistor BDY55 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications AB...

INCHANGE

Download BDY55 Datasheet

Similar Datasheet

BDY10 Silicon NPN Transistor - Valvo
BDY11 Silicon NPN Transistor - Valvo
BDY12 NPN Silicon Planar Trnasistors - Siemens Semiconductor Group
BDY13 NPN Silicon Planar Trnasistors - Siemens Semiconductor Group
BDY13-6 Silicon NPN Power Transistor - Inchange Semiconductor
BDY20 Bipolar NPN Device - Seme LAB
BDY20 Silicon NPN Power Transistor - Inchange Semiconductor
BDY23 (BDY23 - BDY25)NPN SILICON TRANSISTORS - Comset Semiconductor
BDY23 Bipolar NPN Device - Seme LAB
BDY23 Silicon NPN Power Transistor - Inchange Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)