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BU536

Part Number	BU536
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 24, 2020
Detailed Description	isc Silicon NPN Power Transistor BU536 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 480V(Min.) ·High...
Datasheet	BU536 PDF File

Overview

isc Silicon NPN Power Transistor BU536 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 480V(Min.
) ·High Speed Switching ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage RBE≈100Ω 1100 V VCES Collector-Emitter Voltage 1100 V VCEO Collector-Emitter Voltage 480 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junctio...

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