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2SB1106

INCHANGE
Part Number 2SB1106
Manufacturer INCHANGE
Title PNP Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE=1000(Min)@...
Features BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -6m...
Published Sep 27, 2020
Datasheet PDF File 2SB1106 PDF File


2SB1106
2SB1106


Features
BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -60mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= -3A; IB= -6...



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