DatasheetsPDF.com

2SD731

Part Number	2SD731
Manufacturer	INCHANGE
Title	NPN Transistor
Description	·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Wide Area of Saf...
Features	NS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 120 V V(BR)CBO Collector-Base Bre...
Published	Sep 29, 2020
Datasheet	2SD731 PDF File

Features

NS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 170 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter ...

Similar Datasheet

2SD73
NPN Transistor
(INCHANGE)
2SD730
NPN Transistor
(INCHANGE)
2SD732
Silicon NPN Power Transistor
(INCHANGE)
2SD733
NPN Transistor
(INCHANGE)
2SD733
SILICON POWER TRANSISTOR
(SavantIC)
2SD733K
SILICON POWER TRANSISTOR
(SavantIC)
2SD734
PNP/NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
2SD734
NPN Transistor
(SEMTECH)

INDEX :5 7 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)