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TJ11A10M3
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor TJ11A10M3，ITJ11A10M3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤130mΩ.(VGS = -10 V) ·Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage
Regulator
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INCHANGE
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