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FCP190N60

INCHANGE
Part Number FCP190N60
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 24, 2020
Detailed Description isc N-Channel MOSFET Transistor FCP190N60 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resis...
Datasheet PDF File FCP190N60 PDF File

FCP190N60
FCP190N60

Overview
isc N-Channel MOSFET Transistor FCP190N60 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 20.
2 A IDM Drain Current-Single Pulsed 60.
6 A PD Total Dissipation 208 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.
6 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Bre...


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