N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 250V ·Static drain-source on-resistance:
RDS(on) ≤ 42.5mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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