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IXTP1N100P
TO-220C N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IXTP1N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE M...
INCHANGE
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