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SPP04N60C3
TO-251 N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.95Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER...
INCHANGE
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