P-Channel MOSFET. FDS4435BZ Datasheet

FDS4435BZ MOSFET. Datasheet pdf. Equivalent


ON Semiconductor FDS4435BZ
FDS4435BZ
MOSFET – P-Channel,
POWERTRENCH)
-30 V, -8.8 A, 20 mW
Description
This PChannel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that has been especially tailored
to minimize the onstate resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and Portable
Battery Packs.
Features
Max RDS(on) = 20 mW at VGS = 10 V, ID = 8.8 A
Max RDS(on) = 35 mW at VGS = 4.5 V, ID = 6.7 A
Extended VGSS Range (25 V) for Battery Applications
HBM ESD Protection Level of ±3.8 kV Typical (Note 3)
High Performance Trench Technology for Extremely Low RDS(on)
High Power and Current Handling Capability
This Device is PbFree and RoHS Compliant
Specifications
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings
Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current
Continuous TA = 25°C (Note 1a)
Pulsed
30
V
±25
V
A
8.8
50
PD
Power Dissipation TA = 25°C (Note 1a)
2.5
W
Power Dissipation TA = 25°C (Note 1b)
1.0
EAS Single Pulse Avalanche Energy
(Note 4)
24
mJ
TJ, TSTG Operating and Storage Junction Tem- 55 to +150
°C
perature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to
Ambient (Note 1a)
Ratings
25
50
Unit
°C/W
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DDD
D
Pin 1 S S S G
SOIC8
CASE 751EB
ELECTRICAL CONNECTION
D5
D6
D7
D8
4G
3S
2S
1S
MARKING DIAGRAM
FDS4435BZ
ALYW
FDS4435BZ
A
L
YW
= Specific Device Code
= Assembly Site
= Wafer Lot Number
= Assembly Start Week
ORDERING INFORMATION
Device
FDS4435BZ
Package
SOIC8
(PbFree)
Shipping
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2019 Rev. 4
Publication Order Number:
FDS4435BZ/D


FDS4435BZ Datasheet
Recommendation FDS4435BZ Datasheet
Part FDS4435BZ
Description P-Channel MOSFET
Feature FDS4435BZ; FDS4435BZ MOSFET – P-Channel, POWERTRENCH) -30 V, -8.8 A, 20 mW Description This P−Channel MOSFET .
Manufacture ON Semiconductor
Datasheet
Download FDS4435BZ Datasheet




ON Semiconductor FDS4435BZ
FDS4435BZ
Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage
DBVDSS / Breakdown Voltage Temperature
DTJ
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate to Source Leakage Current
ON CHARACTERISTICS
ID = 250 mA, VGS = 0 V
ID = 250 mA, referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±25 V, VDS = 0 V
30
21
V
mV/°C
1
mA
±10
mA
VGS(th) Gate to Source Threshold Voltage
VGS = VDS, ID = 250 mA
1
DVGS(th) / Gate to Source Threshold Voltage
DTJ
Temperature Coefficient
ID = 250 mA, referenced to 25°C
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 8.8 A
VGS = 4.5 V, ID = 6.7 A
VGS = 10 V, ID = 8.8 A, TJ = 125°C
gFS
Forward Transconductance
VDS = 5 V, ID = 8.8 A
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VDS = 15 V, VGS = 0 V, f = 1MHz
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg
Gate Resistance
f = 1MHz
SWITCHING CHARACTERISTICS
td(on)
tr
TurnOn Delay Time
Rise Time
VDD = 15 V, ID = 8.8 A, VGS = 10
V, RGEN = 6 W
td(off) TurnOff Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0 V to 10 V, VDD = 15 V,
ID = 8.8 A
Qg
Total Gate Charge
Qgs
Gate to Source Charge
VGS = 0 V to 5 V, VDD = 15 V,
ID = 8.8 A
VDD = 15 V, ID = 8.8 A
Qgd
Gate to Drain “Miller” Charge
DRAINSOURCE DIODE CHARACTERISTICS
2.1
3
V
6
mV/°C
16
20
mW
26
35
22
28
24
S
1385
1845
pF
275
365
pF
230
345
pF
4.5
W
10
20
ns
6
12
ns
30
48
ns
12
22
ns
28
40
nC
16
23
nC
5.2
nC
7.4
nC
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 8.8A (Note 2)
0.9
1.2
V
trr
Reverse Recovery Time
IF = 8.8 A, di/dt = 100 A/ms
29
44
ns
Qrr
Reverse Recovery Charge
23
35
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR4 material. RqJC is guaranteed
by design while RqCA is determined by the user’s board design.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 125°C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 1 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V.
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ON Semiconductor FDS4435BZ
FDS4435BZ
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
50
VGS = 10V
VGS = 5V
40
VGS = 4.5V
30
20
10
0
0
VGS = 4V
VGS = 3.5V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
VGS = 3.5V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
VGS = 4V
VGS = 4.5V
VGS = 5V
VGS = 10V
10
20
30
40
50
ID , DRAIN CURRENT(A)
Figure 2. Normalized OnResistance vs Drain
Current and Gate Voltage
1.6
ID = 8.8A
VGS = 10V
1.4
1.2
1.0
0.8
0.6
75 50 25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (5C)
Figure 3. Normalized OnResistance vs Junction
Temperature
60
ID = 8.8A PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
50
40
30
TJ = 125oC
20
TJ = 25oC
10
2
4
6
8
10
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 4. OnResistance vs Gate to Source
Voltage
50
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
40
VDS = 5V
30
20
TJ = 150oC
10
TJ = 25oC
TJ =55oC
0
1
2
3
4
5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
VGS = 0V
10
1
0.1
0.01
0.001
TJ = 150oC
TJ = 25oC
TJ = 55 oC
0.0001
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
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