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Power MOSFET. IRFB4110 Datasheet

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Power MOSFET. IRFB4110 Datasheet
















IRFB4110 MOSFET. Datasheet pdf. Equivalent













Part

IRFB4110

Description

HEXFET Power MOSFET



Feature


IRFB4110PbF Applications l High Effici ency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefi ts l Improved Gate, Avalanche and Dynam ic dv/dt Ruggedness l Fully Characteriz ed Capacitance and Avalanche SOA l Enha nced body diode dV/dt and dI/dt Capabil ity l Lead Free l .
Manufacture

International Rectifier

Datasheet
Download IRFB4110 Datasheet


International Rectifier IRFB4110

IRFB4110; RoHS Compliant, Halogen-Free HEXFET® P ower MOSFET D VDSS RDS(on) typ. max. I D (Silicon Limited) 100V 3.7mΩ c 4.5 mΩ 180A S ID (Package Limited) 120A D G Gate S D G TO-220AB D Drain S Source Base Part Number IRFB4110PbF P ackage Type TO-220 Standard Pack Form Quantity Tube 50 Orderable Part Nu mber IRFB4110PbF Absolute Maximum Rati ngs Symbol Parameter .


International Rectifier IRFB4110

ID @ TC = 25°C Continuous Drain Curren t, VGS @ 10V (Silicon Limited) ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) d Pulsed Drain Current Maximum Power Di ssipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage f Peak Di ode Recovery TJ TSTG .


International Rectifier IRFB4110

Operating Junction and Storage Temperat ure Range Soldering Temperature, for 1 0 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Cha racteristics EAS (Thermally limited) I AR EAR e Single Pulse Avalanche Energy Ãd Avalanche Current g Repetitive Ava lanche Energy Thermal Resistance Symb ol RθJC Parameter k Junction-to-Case RθCS RθJA Case-to-.





Part

IRFB4110

Description

HEXFET Power MOSFET



Feature


IRFB4110PbF Applications l High Effici ency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefi ts l Improved Gate, Avalanche and Dynam ic dv/dt Ruggedness l Fully Characteriz ed Capacitance and Avalanche SOA l Enha nced body diode dV/dt and dI/dt Capabil ity l Lead Free l .
Manufacture

International Rectifier

Datasheet
Download IRFB4110 Datasheet




 IRFB4110
IRFB4110PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead Free
l RoHS Compliant, Halogen-Free
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
100V
3.7m
c 4.5m
180A
S ID (Package Limited)
120A
D
G
Gate
S
D
G
TO-220AB
D
Drain
S
Source
Base Part Number
IRFB4110PbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB4110PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
e Single Pulse Avalanche Energy
Ãd Avalanche Current
g Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
k Junction-to-Case
RθCS
RθJA
Case-to-Sink, Flat Greased Surface
j Junction-to-Ambient
Max.
™ 180
™ 130
120
670
370
2.5
± 20
5.3
-55 to + 175
300
x x 10lb in (1.1N m)
190
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.402
–––
62
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Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
April 28, 2014




 IRFB4110
IRFB4110PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
100 ––– –––
––– 0.108 –––
––– 3.7 4.5
2.0 ––– 4.0
––– ––– 20
––– ––– 250
––– ––– 100
V VGS = 0V, ID = 250µA
d V/°C Reference to 25°C, ID = 5mA
g mVGS = 10V, ID = 75A
V VDS = VGS, ID = 250µA
µA VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
160 ––– –––
––– 150 210
––– 35 –––
––– 43 –––
S VDS = 50V, ID = 75A
nC ID = 75A
g VDS = 50V
VGS = 10V
RG
Gate Resistance
––– 1.3 –––
td(on)
Turn-On Delay Time
––– 25 –––
tr
Rise Time
––– 67 –––
td(off)
Turn-Off Delay Time
––– 78 –––
tf
Fall Time
––– 88 –––
Ciss
Input Capacitance
––– 9620 –––
Coss
Output Capacitance
––– 670 –––
Crss
Reverse Transfer Capacitance
––– 250 –––
i Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 820 –––
h Coss eff. (TR) Effective Output Capacitance (Time Related)
––– 950 –––
ns VDD = 65V
ID = 75A
g RG = 2.6
VGS = 10V
pF VGS = 0V
VDS = 50V
ƒ = 1.0MHz
j VGS = 0V, VDS = 0V to 80V
h VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãdi (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ––– ––– 170 A MOSFET symbol
D
showing the
––– ––– 670
integral reverse
G
––– ––– 1.3
g p-n junction diode.
V TJ = 25°C, IS = 75A, VGS = 0V
S
––– 50 75 ns TJ = 25°C
VR = 85V,
––– 60 90
TJ = 125°C
––– 94 140 nC TJ = 25°C
g IF = 75A
di/dt = 100A/µs
––– 140 210
TJ = 125°C
––– 3.5 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 75A, di/dt 630A/µs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 120A. Note that current
… Pulse width 400µs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.033mH
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25, IAS = 108A, VGS =10V. Part not recommended for use
above this value.
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
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April 28, 2014




 IRFB4110
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
4.5V
IRFB4110PbF
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
4.5V
10
0.1
60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
10
0.1
60µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0
ID = 75A
VGS = 10V
2.5
10
TJ = 25°C
TJ = 175°C
1
VDS = 25V
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
12.0
ID= 75A
10.0
VDS= 80V
8.0
VDS= 50V
6.0
Coss
1000
4.0
Crss
2.0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.0
0
50
100
150
200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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April 28, 2014




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