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3DD155 Datasheet, Equivalent, Power Transistor.

Silicon NPN Power Transistor

Silicon NPN Power Transistor

 

 

 

Part 3DD155
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor DESCRI PTION ·DC Current Gain : hFE= 15-120@I C= 1A ·Collector-Emitter Saturation Vo ltage : VCE(sat)= 1.
0V(Max)@ IC= 1A ·M inimum Lot-to-Lot variations for robust device performance and reliable operat ion APPLICATIONS ·Designed for B&W TV horizontal output , regulated power su pply and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY MBOL PARAMETER VALUE A 80 B 150 VC BO Collector-Base Voltage C 200 D 250 E 350 F 400 A 50 B 100 VCEO Coll ector-Emitter Voltage C 150 D 200 E 2 50 F 300 VEBO Emitter-Base Voltage 5 IC Collector Cur .
Manufacture Inchange Semiconductor
Datasheet
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Part 3DD155
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor DESCRI PTION ·DC Current Gain : hFE= 15-120@I C= 1A ·Collector-Emitter Saturation Vo ltage : VCE(sat)= 1.
0V(Max)@ IC= 1A ·M inimum Lot-to-Lot variations for robust device performance and reliable operat ion APPLICATIONS ·Designed for B&W TV horizontal output , regulated power su pply and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY MBOL PARAMETER VALUE A 80 B 150 VC BO Collector-Base Voltage C 200 D 250 E 350 F 400 A 50 B 100 VCEO Coll ector-Emitter Voltage C 150 D 200 E 2 50 F 300 VEBO Emitter-Base Voltage 5 IC Collector Cur .
Manufacture Inchange Semiconductor
Datasheet
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3DD155

3DD155
3DD155

3DD155

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