SCT20N120AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package
Features
HiP247
3 2 1
D(2, TAB)
AEC-Q101 qualified Very tight variation of on-resistance vs. temperature Very high operating temperature capability (TJ = 200 °C) Very fast and robust intrinsic body diode Low capacita...
