This P-channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness. High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface.
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A General Description This P-channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness. High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant Applications Load Switch Synchronous Rectifier D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 D2 55 D2 66 Q2 D1 77 Q1 D1 88 44 G2 .
Similar Product
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | FDS8934A |
Fairchild Semiconductor |
Dual P-Channel MOSFET | |
2 | FDS8935 |
Fairchild Semiconductor |
MOSFET | |
3 | FDS8936A |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
4 | FDS8936S |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
5 | FDS89141 |
Fairchild Semiconductor |
Dual N-Channel MOSFET |