Transistor
2SD966
Silicon NPN epitaxial planer type
For low-frequency power amplification For stroboscope
5.9± 0.2
Unit: mm
4.9± 0.2
q q
2.54± 0.15
(Ta=25˚C)
Ratings 40 20 7 8 5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C
0.45–0.1 1.27
+0.2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Colle...
