2SJ450
Silicon P-Channel MOS FET
ADE-208-381 1st. Edition
Application
High speed power switching
Features
Low on-resistance. Low drive power High speed switching 2.5 V gate drive device.
Outline
UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S
3
G
2SJ450
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltag...
