2SJ451
Silicon P-Channel MOS FET
ADE-208-382 1st. Edition
Application
Low frequency power switching
Features
Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK).
Outline
MPAK
3 1 2 D 1. Source 2. Gate 3. Drain
G
S
2SJ451
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drai...
