Part Number |
2SK2800 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
Silicon N Channel MOS FET |
Datasheet |
2SK2800 Datasheet (PDF) |
2SK2800
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-513G (Z) 8th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 15 mΩ typ. • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain (Flange) 3. Source
2SK2800
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note 3 Note 3 Note 2 Note1
Ratings 60 ±20 40 160 40 40 137 50 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR
Pch Tch
Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω
2
2SK2800
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 60 ±20 — — 1.5 — — 20 — — — — — — — — — Typ — — — — — 15 25 35 1500 720 200 20 180 200 .