Part Number |
2SK2802 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
Silicon N Channel MOS FET |
Datasheet |
2SK2802 Datasheet (PDF) |
2SK2802
Silicon N Channel MOS FET Low Frequency Power Switching
ADE-208-537C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK)
Outline
MPAK
3 1
D
2
G
1. Source 2. Gate 3. Drain
S
2SK2802
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse) Pch Tch Tstg
Note1 Note2
Ratings 30 ±10 0.5 1.0 150 150 –55 to +150
Unit V V A A mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 30 ±10 — — 0.5 — — 0.7 — — — — — — — Typ — — — — — 0.2 0.3 1.2 14.0 68 3.0 0.27 1.5 2.2 2.15 Max — — 1.0 ±10 1.5 0.28 0.5 — — — — — — — — Unit V .