Part Number |
2SK2838 |
Manufacturers |
Toshiba Semiconductor |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
2SK2838 Datasheet (PDF) |
2SK2838
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2838
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance : RDS (ON) = 0.84 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.4 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 400 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS 400 V
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
VDGR VGSS
ID IDP PD
EAS
400 V ±30 V 5.5 A 22 A 40 W
223 mJ
Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
IAR EAR Tch Tstg
5.5 4.0 150 −55 to 150
A mJ °C °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and t.