Part Number |
2SK2841 |
Manufacturers |
Toshiba Semiconductor |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
2SK2841 Datasheet (PDF) |
2SK2841
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2841
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z Low drain−source ON resistance
: RDS (ON) = 0.4 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 8.0 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 400 V)
z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
400 400 ±30 10 40 80
360
10 8 150 −55 to 150
V V V A A W
mJ
A mJ °C °C
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 2.0 g (typ.)
Note: Using continuously u.