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2SK3209

N-Channel MOSFET

Description

2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features Low on-resistance R DS =35mΩ typ. High speed switching 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3209 Absolute Maximum Ratings (Ta = 25°C) Item Dra...

Hitachi Semiconductor

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