2SK3229
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-766(Z) Target specification 1st. Edition December 1998 Features
Low on-resistance R DS(on) =6mΩ typ. Low drive current 4V gate drive device can be driven from 5V source
Outline
TO–220CFM
D
G 1 2 3
S
1. Gate 2. Drain 3. Source
2SK3229
Absolute Maximum Ratings (Ta = 25°C)
Item D...
