JANSR2N7397 Datasheet | 4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET





JANSR2N7397 PDF File (Datasheet) Download

Part Number JANSR2N7397
Description 4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET
Manufacture Intersil Corporation
Total Page 8 Pages
PDF Download Download JANSR2N7397 PDF File

Features: JANSR2N7397 Formerly FSL234R4 June 1998 4A, 250V, 0.610 Ohm, Rad Hard, N-Chann el Power MOSFET Description The Discret e Products Operation of Intersil Corpor ation has developed a series of Radiati on Hardened MOSFETs specifically design ed for commercial and military space ap plications. Enhanced Power MOSFET immun ity to Single Event Effects (SEE), Sing le Event Gate Rupture (SEGR) in particu lar, is combined with 100K RADS of tota l dose hardness to provide devices whic h are ideally suited to harsh space env ironments. The dose rate and neutron to lerance necessary for military applicat ions have not been sacrificed. The Int ersil portfolio of SEGR resistant radia tion hardened MOSFETs includes N-Channe l and P-Channel devices in a variety of voltage, current and on-resistance rat ings. Numerous packaging options are al so available. This MOSFET is an enhance ment-mode silicon-gate power field-eff ect transistor of the vertical DMOS (VD MOS) structure. It is specially designed and processed to be radiat.

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JANSR2N7397
Formerly FSL234R4
June 1998
4A, 250V, 0.610 Ohm, Rad Hard,
N-Channel Power MOSFET
Features
• 4A, 250V, rDS(ON) = 0.610
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 4.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Ordering Information
PART NUMBER
PACKAGE
JANSR2N7397
TO-205AF
Die Family TA17638.
MIL-PRF-19500/631.
BRAND
JANSR2N7397
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page: http://www.intersil.com.
Contact your local Intersil Sales Office for additional
information.
Symbol
Package
TO-205AF
G
DS
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
2-40
File Number 4453.1

                    
  






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