JANTX2N6802 Id=2.5A Datasheet

JANTX2N6802 Datasheet, PDF, Equivalent


Part Number

JANTX2N6802

Description

POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=2.5A)

Manufacture

International Rectifier

Total Page 6 Pages
Datasheet
Download JANTX2N6802 Datasheet


JANTX2N6802
Previous Datasheet
Index
Next Data Sheet
Provisional Data Sheet No. PD-9.433B
JANTX2N6802
HEXFET® POWER MOSFET
JANTXV2N6802
[REF:MIL-PRF-19500/557]
[GENERIC:IRFF430]
N-CHANNEL
500 Volt, 1.5HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
Product Summary
Part Number
BVDSS
JANTX2N6802
JANTXV2N6802
500V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
RDS(on)
1.5
ID
2.5A
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
JANTX2N6802, JANTXV2N6802 Units
2.5
1.5 A
11
25 W
0.20
W/K 
±20 V
3.5 V/ns
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
0.98 (typical)
oC
g
To Order

JANTX2N6802
Previous Datasheet
Index
Next Data Sheet
JANTX2N6802, JANTXV2N6802 Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
500
2.0
1.5
19.8
2.2
5.5
Typ. Max. Units
——
V
0.43 — V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
— 0.15
— 1.725
— 4.0 V
— — S( )
VGS = 10V, ID = 1.5A 
VGS = 10V, ID = 2.5A
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 1.5A 
— 25
— 250
µA
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
— 100 nA
— -100
VGS = 20V
VGS = -20V
— 29.5
— 4.6 nC
VGS = 10V, ID = 2.5A
VDS = Max. Rating x 0.5
— 19.7
see figures 6 and 13
— 30
30
55
ns
VDD = 250V, ID = 2.5A,
RG = 7.5, VGS = 10V
— 30
see figure 10
5.0 —
15 —
Measured from the Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to internal inductances.
nH
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
610 —
135 —
65 —
pF
VGS = 0V, VDS = 25V
f = 1.0 MHz
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) Œ
— — 2.5 A Modified MOSFET symbol showing the
— — 11
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
— — 1.4 V
— — 900 ns
— — 7.0 µC
Tj = 25°C, IS = 2.5A, VGS = 0V 
Tj = 25°C, IF = 2.5A, di/dt 100A/µs
VDD 50V 
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
— — 5.0
— — 175 K/W
Test Conditions
Typical socket mount
To Order


Features Previous Datasheet Index Next Data She et Provisional Data Sheet No. PD-9.433B HEXFET ® JANTX2N6802 POWER MOSFET JANTXV2N6802 [REF:MIL-PRF-19500/557] [G ENERIC:IRFF430] N-CHANNEL Product Summa ry Part Number JANTX2N6802 JANTXV2N6802 BVDSS 500V RDS(on) 1.5Ω ID 2.5A 500 Volt, 1.5Ω HEXFET HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transi stors. The efficient geometry achieves very low onstate resistance combined wi th high transconductance. HEXFET transi stors also feature all of the well-esta blish advantages of MOSFETs, such as vo ltage control, very fast switching, eas e of paralleling and electrical paramet er temperature stability. They are well -suited for applications such as switch ing power supplies, motor controls, inv erters, choppers, audio amplifiers, and high energy pulse circuits, and virtua lly any application where high reliabil ity is required. Features: s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements.
Keywords JANTX2N6802, datasheet, pdf, International Rectifier, POWER, MOSFET, N-CHANNELBVdss=500V/, Rdson=1.5ohm/, Id=2.5A, ANTX2N6802, NTX2N6802, TX2N6802, JANTX2N680, JANTX2N68, JANTX2N6, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)