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IRF250

N-Channel Power MOSFET

Description

IRF250 Data Sheet March 1999 File Number 1825.3 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is designed, tested and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulator...

Intersil Corporation

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