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IRF830

NXP

PowerMOS transistor


Description
Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES Repetitive Avalanche Rated Fast switching High thermal cycling performance Low thermal resistance g IRF830 SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 5.9 A RDS(ON) ≤ 1.5 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power tra...



NXP

IRF830

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