IRFF9130
Data Sheet February 1999 File Number 2216.3
-6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are design...