Power MOSFET. IRFF9130 Datasheet

IRFF9130 MOSFET. Datasheet pdf. Equivalent


Intersil Corporation IRFF9130
Data Sheet
IRFF9130
February 1999 File Number 2216.3
-6.5A, -100V, 0.300 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17511.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF9130
TO-205AF
IRFF9130
NOTE: When ordering, include the entire part number.
Features
• -6.5A, -100V
• rDS(ON) = 0.300
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
4-101
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


IRFF9130 Datasheet
Recommendation IRFF9130 Datasheet
Part IRFF9130
Description P-Channel Power MOSFET
Feature IRFF9130; IRFF9130 Data Sheet February 1999 File Number 2216.3 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFE.
Manufacture Intersil Corporation
Datasheet
Download IRFF9130 Datasheet




Intersil Corporation IRFF9130
IRFF9130
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
IRFF9130
-100
-100
-6.5
-26
±20
25
0.2
500
-55 to 150
300
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
VGS = 0V, ID = -250µA, (Figure 10)
VGS = VDS, ID = -250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
VDS > ID(ON) x rDS(ON)MAX, VGS = -10V
VGS = ±20V
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
rDS(ON)
gfs
VGS = -10V, ID = -3A, (Figures 8, 9)
VDS ID(ON) x rDS(ON)MAX, ID = -3A,
(Figure 12)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
tf
VDD = 0.5 x Rated BVDSS, ID -6.5A, RG = 9.1,
RL = 7.4for BVDSS = -100V
RL =5.8for BVDSS = -80V
(Figures 17, 18) MOSFET Switching Times are Es-
sentially Independent of Operating Temperature
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Qg(TOT)
Qgs
Qgd
VGS = -10V, ID = -6.5A, VDS = 0.8 x Rated BVDSS,
IG(REF) = -1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
Input Capacitance
Output Capacitance
CISS
COSS
VGS = 0V, VDS = -25V, f = 1.0MHz, (Figure 11)
Reverse-Transfer Capacitance
CRSS
Internal Drain Inductance
Internal Source Inductance
LD Measured From the
Modified MOSFET Sym-
Drain Lead, 5mm (0.2in) bol Showing the Internal
From Package to Center Devices
of Die
Inductances
LS Measured From The
Source Lead, 5mm
(0.2in) From Header to
D
LD
Source Bonding Pad
G
LS
S
Junction to Case
Junction to Ambient
RθJC
RθJA
Typical Socket Mount
MIN
-100
-2.0
-
-
-6.5
-
-
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
-- V
- -4.0 V
- -25 µA
- -250 µA
-- A
- ±100 nA
0.25 0.300
3.5 -
S
30 60
70 140
70 140
70 140
25 45
ns
ns
ns
ns
nC
13 -
12 -
500 -
300 -
100 -
5.0 -
nC
nC
pF
pF
pF
nH
15 -
nH
- 5.0 oC/W
- 175 oC/W
4-102



Intersil Corporation IRFF9130
IRFF9130
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET
Symbol Showing the In-
tegral Reverse
P-N Junction Diode
G
D
MIN TYP
--
--
MAX
-6.5
-26
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TC = 25oC, ISD = 6.5A, VGS = 0V (Figure 13)
TJ = 150oC, ISD = 6.5A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 6.5A, dISD/dt = 100A/µs
--
- 300
- 1.8
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 17.75mH, RG = 25, peak IAS = 6.5A. (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
-1.5
-
-
V
ns
µC
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-7.0
-5.6
-4.2
-2.8
-1.4
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.0110-5
PDM
SINGLE PULSE
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1 10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-103





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