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Power Amplifier. PA1186 Datasheet |
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PA1186
800-960 MHz.
6 Watt 28v. GaAs Ultra Linear Power Amplifier
Features (typical values)
High IP3 ............................................. +56.0 dBm.
Low NF ....................................................... 2.4 dB.
High Output Power ............................... +38 dBm.
Low Cost
Parameter
Typical Min.
Value Value
Max.
Value
Units
Frequency
800 960 MHz.
Gain
29.0 27.0
dB.
Gain Flatness
+/- 0.3
±dB.
Pout @ 1dB. comp.
38.0 36.0
dBm.
Noise Figure 2.4 3.5 dB.
ACPR (30kHz. BW)*
-50.0
dBc.
VSWR (Input/Output)
1.5:1/2:1
2:1/2.5:1
IP3 (two tone)**
+56.0 +50.0
dBm.
Supply Required***
+28/1000
+28/1200 v./mA.
* ±850kHz from fc at power level of 30dBm. (IS-95)
** IP3 measured with 2 tones @+25dBm. per tone @ 1MHz apart
*** A 10 micro farad capacitor is required from pin 3 (+V) to ground
Min and max values from 0 to 85 degrees C
Outline Drawings
See Attached Document
Typical Performance
--u-- 0°C --n-- +25°C --∆-- +75°C
G ain (d B ) vs. Frequ en cy
32
30
28
26
800
850
960
N F (d B ) vs. Freq uen cy
3
2 .5
2
1 .5
800
900
960
P out (dB m ) vs. Frequency
40
39
38
37
36
800
880
960
VSW R vs. Frequency
In O ut
2 .5
2
1 .5
1
800
880
960
Maximum Ratings
Storage Temperature ....... -40°C to +125°C
DC Voltage .................................. +30 volts
RF Input Power .......................... +15 dBm.
Case Temperature ........................... +90°C
IP 3 (d B m ) vs. F req u en cy
56
55
54
53
800
880
F req ue ncy in M H z.
960
Rev: 033001
Specifications subject to change without notice
100 Emlen Way Telford, Pa. 18969
Tel. (215) 723-6011 Fax. (215) 723-6015
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OUTLINE DRAWING
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