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PA2423 Datasheet > Production Information

PA2423 | SiGe Semiconductor Inc.

2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information

PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Applications Bluetoothtm Class 1 USB Dongles Laptops Access Points Cordless Piconets Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423MB is designed for class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.7 dBm output power with 45% power-added efficiency – m.



Download PA2423 Datasheet
Download PA2423 Datasheet


PA2423



PA2423 | SiGe Semiconductor Inc.
2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
Download PA2423 Datasheet
Download PA2423 Datasheet
PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Applications Bluetooth.
PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Applications Bluetoothtm Class 1 USB Dongles Laptops Access Points Cordless Piconets Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423MB is designed for class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.7 dBm output power with 45% power-added efficiency – making it capable of overcoming insertion losses of.


PA2423 | SiGe Semiconductor Inc.
2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
Download PA2423 Datasheet
Download PA2423 Datasheet
PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Applications Bluetooth.
PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Applications Bluetoothtm Class 1 USB Dongles Laptops Access Points Cordless Piconets Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423MB is designed for class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.7 dBm output power with 45% power-added efficiency – making it capable of overcoming insertion losses of.


PA2423 | SiGe Semiconductor Inc.
2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information
Download PA2423 Datasheet
Download PA2423 Datasheet
PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Applications Bluetooth.
PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Applications Bluetoothtm Class 1 USB Dongles Laptops Access Points Cordless Piconets Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423MB is designed for class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.7 dBm output power with 45% power-added efficiency – making it capable of overcoming insertion losses of.


PA2423G | SiGe Semiconductor Inc.
2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
Download PA2423G Datasheet
Download PA2423G Datasheet
PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetootht.
PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetoothtm Class 1 USB Dongles Laptops Access Points Cordless Piconets Flip chip and chip-on-board applications Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423G is designed for Class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.5 dBm output power with 47% poweradded efficiency – making it cap.


PA2423L | SiGe Semiconductor Inc.
2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
Download PA2423L Datasheet
Download PA2423L Datasheet
PA2423L 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetooth.
PA2423L 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetoothtm Class 1 USB Dongles Laptops Access Points Cordless Piconets Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423L is designed for class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.5 dBm output power with 45% power-added efficiency – making it capable of overcoming insertion losses of .






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