Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGY25N120D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanc...