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MJE200

Part Number	MJE200
Manufacturer	Motorola
Description	5 AMPERE POWER TRANSISTORS
Published	May 7, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE200/D Complementary Silicon Power Plastic Transistors...
Datasheet	MJE200 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE200/D Complementary Silicon Power Plastic Transistors .
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designed for low voltage, low–power, high–gain audio amplifier applications.
• Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High DC Current Gain — hFE = 45 (Min) @ IC = 2.
0 Adc High DC Current Gain — hFE = 10 (Min) @ IC = 5.
0 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.
3 Vdc (Max) @ IC = 500 mAdc VCE(sat) = 0.
75 Vdc (Max) @ IC = 2.
0 Adc • High Current–Gain — Bandwidth Product — fT = 65 MHz (Min) @ IC = 100 mAdc • Annular Construction for Low Leakage — ICBO = 10...

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