MMBT3904L Purpose Transistor Datasheet

MMBT3904L Datasheet, PDF, Equivalent


Part Number

MMBT3904L

Description

General Purpose Transistor

Manufacture

ON

Total Page 7 Pages
Datasheet
Download MMBT3904L Datasheet


MMBT3904L
MMBT3904L, SMMBT3904L
General Purpose Transistor
NPN Silicon
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 3)
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
ICM
Value
40
60
6.0
200
900
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
@TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. Reference SOA curve.
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COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
1AM M G
G
1
1AM = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBT3904LT1G
SOT−23 3000 / Tape &
SMMBT3904LT1G (Pb−Free)
Reel
MMBT3904LT3G
SOT−23 10,000 / Tape &
SMMBT3904LT3G (Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 13
1
Publication Order Number:
MMBT3904LT1/D

MMBT3904L
MMBT3904L, SMMBT3904L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 4)
V(BR)CEO
40
Vdc
V(BR)CBO
60
Vdc
V(BR)EBO
6.0
Vdc
IBL − 50 nAdc
ICEX
− 50 nAdc
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
HFE
VCE(sat)
VBE(sat)
40 −
70 −
100 300
60 −
30 −
− 0.2
− 0.3
0.65 0.85
− 0.95
Vdc
Vdc
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
300 −
MHz
− 4.0
pF
− 8.0
pF
1.0 10
kW
0.5 8.0 X 10− 4
100 400
1.0 40 mmhos
− 5.0
dB
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
td − 35
ns
tr − 35
Storage Time
Fall Time
(VCC = 3.0 Vdc,
IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
ts
tf
− 200
− 50
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
DUTY CYCLE = 2%
300 ns
- 0.5 V
+10.9 V
10 k
< 1 ns
+3 V
275
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
+10.9 V
CS < 4 pF*
0
- 9.1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
10 k
1N916
+3 V
275
CS < 4 pF*
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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2


Features MMBT3904L, SMMBT3904L General Purpose T ransistor NPN Silicon Features • The se Devices are Pb−Free, Halogen Free/ BFR Free and are RoHS Compliant • S P refix for Automotive and Other Applicat ions Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualifi ed and PPAP Capable MAXIMUM RATINGS R ating Collector −Emitter Voltage Coll ector −Base Voltage Emitter −Base V oltage Collector Current − Continuous Collector Current − Peak (Note 3) TH ERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IC ICM Value 40 60 6.0 200 900 Unit Vdc Vdc Vdc mAdc mAdc Characteris tic Total Device Dissipation FR− 5 Bo ard (Note 1) @TA = 25°C Derate above 2 5°C Symbol PD Max 225 1.8 Unit mW m W/°C Thermal Resistance, Junction−t o−Ambient Total Device Dissipation Al umina Substrate, (Note 2) @TA = 25°C D erate above 25°C RqJA PD 556 °C/W 3 00 mW 2.4 mW/°C Thermal Resistance, J unction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C .
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