MMBT3906 PNP TRANSISTOR Datasheet

MMBT3906 Datasheet, PDF, Equivalent


Part Number

MMBT3906

Description

SMALL SIGNAL PNP TRANSISTOR

Manufacture

STMicroelectronics

Total Page 4 Pages
Datasheet
Download MMBT3906 Datasheet


MMBT3906
® MMBT3906
SMALL SIGNAL PNP TRANSISTOR
Type
MMBT3906
Marking
36
s SILICON EPITAXIAL PLANAR PNP
TRANSISTOR
s MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
s TAPE AND REEL PACKING
s THE NPN COMPLEMENTARY TYPE IS
MMBT3904
PRELIMINARY DATA
APPLICATIONS
s WELL SUITABLE FOR PORTABLE
EQUIPMENT
s SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current
Ptot Total Dissipation at TC = 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
June 2002
Value
-60
-40
-6
-200
350
-65 to 150
150
Unit
V
V
V
mA
mW
oC
oC
1/4

MMBT3906
MMBT3906
THERMAL DATA
Rthj-amb Thermal Resistance Junction-Ambient
Device mounted on a PCB area of 1 cm2
Max
357.1
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEX Collector Cut-off
Current (VBE = 3 V)
IBEX Collector Cut-off
Current (VBE = 3 V)
V(BR)CEOCollector-Emitter
Breakdown Voltage
(IB = 0)
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
VCE = -30 V
VCE = -30 V
IC = -1 mA
IC = -10 µA
IE = -10 µA
IC = -10 mA
IC = -50 mA
IB = -1 mA
IB = -5 mA
VBE(sat)Base-Emitter
Saturation Voltage
IC = -10 mA
IC = -50 mA
IB = -1 mA
IB = -5 mA
hFEDC Current Gain
IC = -0.1 mA
IC = -1 mA
IC = -10 mA
IC = -50 mA
IC = -100 mA
VCE = -1 V
VCE = -1 V
VCE = -1 V
VCE = -1 V
VCE = -1 V
fT Transition Frequency IC = -10mA VCE = -20 V f = 100MHz
NF Noise Figure
CCBO
Collector-Base
Capacitance
VCE = -5 V IC = -0.1 mA f = 10 Hz
to 15.7 KHz RG = 1 K
IE = 0 VCB = -5 V f = 100 KHz
CEBO
Emitter-Base
Capacitance
IC = 0 VEB = -0.5 V f = 100 KHz
td Delay Time
tr Rise Time
IC = -10 mA
VCC = -3V
IB = -1 mA
ts Storage Time
tf Fall Time
IC = -10 mA
VCC = -3V
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
IB1 = -IB2 = -1 mA
Min.
-40
-60
-6
-0.65
60
80
100
60
30
250
Typ.
4
6
25
Max.
-50
-50
-0.25
-0.4
-0.85
-0.95
300
35
35
225
72
Unit
nA
nA
V
V
V
V
V
V
V
MHz
dB
pF
pF
ns
ns
ns
ns
2/4


Features ® MMBT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type MMBT3906 s Mar king 36 s s s SILICON EPITAXIAL PLAN AR PNP TRANSISTOR MINIATURE SOT-23 PLAS TIC PACKAGE FOR SURFACE MOUNTING CIRCUI TS TAPE AND REEL PACKING THE NPN COMPLE MENTARY TYPE IS MMBT3904 SOT-23 APPLIC ATIONS WELL SUITABLE FOR PORTABLE EQUIP MENT s SMALL LOAD SWITCH TRANSISTOR WIT H HIGH GAIN AND LOW SATURATION VOLTAGE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V E BO IC P tot T stg Tj Parameter Collecto r-Base Voltage (I E = 0) Collector-Emit ter Voltage (I B = 0) Emitter-Base Volt age (I C = 0) Collector Current Total D issipation at T C = 25 C Storage Temper ature Max. Operating Junction Temperatu re o Value -60 -40 -6 -200 350 -65 to 150 150 Unit V V V mA mW o o C C Jun e 2002 1/4 MMBT3906 THERMAL DATA R th j-amb • Thermal Resistance Junction-A mbient 2 Max 357.1 o C/W • Devic e mounted on a PCB area of 1 cm ELECTR ICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb.
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