MMBT5551LT1 TransistorsNPN Silicon Datasheet

MMBT5551LT1 Datasheet, PDF, Equivalent


Part Number

MMBT5551LT1

Description

High Voltage Transistors(NPN Silicon)

Manufacture

ON

Total Page 6 Pages
Datasheet
Download MMBT5551LT1 Datasheet


MMBT5551LT1
MMBT5550LT1,
MMBT5551LT1
MMBT5551LT1 is a Preferred Device
High Voltage Transistors
NPN Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol 5550 5551 Unit
Collector −Emitter Voltage
VCEO 140 160 Vdc
Collector −Base Voltage
VCBO 160 180 Vdc
Emitter −Base Voltage
VEBO 6.0 Vdc
Collector Current − Continuous
IC 600 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
Symbol
PD
Max Unit
225www.DataSheemt4UW.com
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate Above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
−55 to +150
°C
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
SOT−23 (TO−236)
CASE 318
STYLE 6
xxxM
xxx = MMBT550LT1 = M1F,
MMBT5551LT1, LT3, LT1G = G1
M = Month Code
ORDERING INFORMATION
Device
MMBT5550LT1
Package
SOT−23
Shipping
3000 Tape & Reel
MMBT5550LT1G
MMBT5551LT1
MMBT5551LT1G
MMBT5551LT3
MMBT5551LT3G
SOT−23 3000 Tape & Reel
(Pb−Free)
SOT−23 3000 Tape & Reel
SOT−23 3000 Tape & Reel
(Pb−Free)
SOT−23 10,000 Tape & Reel
SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 4
1
Publication Order Number:
MMBT5550LT1/D

MMBT5551LT1
MMBT5550LT1, MMBT5551LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
MMBT5550
MMBT5551
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MMBT5550
MMBT5551
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS
MMBT5550
MMBT5551
MMBT5550
MMBT5551
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Both Types
MMBT5550
MMBT5551
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Both Types
MMBT5550
MMBT5551
Collector Emitter Cut−off
(VCB = 10 V)
(VCB = 75 V)
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Both Types
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
ICES
Min
140
160
160
180
6.0
60
80
60
80
20
30
Max Unit
Vdc
Vdc
Vdc
100 nAdc
50
100 mAdc
50
nAdc
50
250
250
Vdc
0.15
0.25
0.20
Vdc
1.0
1.2
1.0
nA
50
100
http://onsemi.com
2


Features MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transi stors NPN Silicon Features http://onsem i.com COLLECTOR 3 Symbol VCEO VCBO VEBO IC 5550 140 160 6.0 600 5551 160 180 U nit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER • Pb−Free Packages are Available MA XIMUM RATINGS Rating Collector −Emitt er Voltage Collector −Base Voltage Em itter −Base Voltage Collector Current − Continuous Maximum ratings are th ose values beyond which device damage c an occur. Maximum ratings applied to th e device are individual stress limit va lues (not normal operating conditions) and are not valid simultaneously. If th ese limits are exceeded, device functio nal operation is not implied, damage ma y occur and reliability may be affected . MARKING DIAGRAM THERMAL CHARACTERIS TICS Characteristic Total Device Dissip ation FR−5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Total Device Di ssipation Alumina Substrate (Note 2) TA = 25°C Derate Above 25°C Thermal Resistance.
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