PNP Transistor. NTE2401 Datasheet

NTE2401 Transistor. Datasheet pdf. Equivalent

Part NTE2401
Description Silicon PNP Transistor
Feature NTE2401 Silicon PNP Transistor RF Stages in FM Front Ends Description: The NTE2401 is a silicon PNP .
Manufacture NTE
Datasheet
Download NTE2401 Datasheet




NTE2401
NTE2401
Silicon PNP Transistor
RF Stages in FM Front Ends
Description:
The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed
for use in RF stages in FM front–ends in common base configuration for SMD applications.
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Total Power Dissipation (TA +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W
Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Emitterr Cutoff Current
Base Current
Base–Emitter Voltage
Transition Frequency
Feedback Capacitance
Noise Factor
ICBO VCB = 30V, IE = 0
– – 50 nA
IEBO VEB = 4V, IC = 0
– – 10 µA
IB VCE = 10V, IC = 4mA
– 80 160 µA
VCE = 10V, IC = 1mA
– 22 – µA
VBE VCE = 10V, IC = 4mA
– 0.76 – V
fT VCE = 10V, IC = 1mA
– 350 – MHz
VCE = 10V, IC = 4mA
– 450 – MHz
VCE = 10V, IC = 8mA
– 440 – MHz
Crb VCE = 10V, VEB = 0
– 0.1 – pF
F VCE = 10V, IC = 2mA, Gs = 16.7mS – 3.0 – dB
VCE = 10V, IC = 5mA, Gs = 6.7mS, – 3.5 – dB
jBs = 5mS



NTE2401
Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
y–parameters (common base)
Input Conductance
gib VCB = 10V, IC = 4mA,
f = 100MHz
125 mS
Input Capacitance
Transfer Admittance
Phase Angle of Transfer Admittance
Output Conductance
Output Capacitance
Feedback Admittance
Phase Angle of Feedback Admittance
Cib
|yfb|
ϕfb
gob
Cob
|yrb|
ϕrb
64
100
147
40
1.25
220
85
pF
mS
°
µS
pF
µS
°
.016 (0.48)
C .098
(2.5)
B E Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)







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