Complementary Transistors. NTE2402 Datasheet

NTE2402 Transistors. Datasheet pdf. Equivalent

Part NTE2402
Description Silicon Complementary Transistors
Feature NTE2402 (NPN) & NTE2403 (PNP) Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier Descrip.
Manufacture NTE
Datasheet
Download NTE2402 Datasheet



NTE2402
NTE2402 (NPN) & NTE2403 (PNP)
Silicon Complementary Transistors
Low Noise, UHF/VHF Amplifier
Description:
The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT–23 type
surface mount package designed for use in UHF and microwave amplifiers in thick and thin–film cir-
cuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These tran-
sistors feature low intermodulation distortion and high power gain. Due to very high transition fre-
quency, these devices also have excellent wideband properties and low noise up to high frequencies.
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Total Power Dissipation (TA +60°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W
Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
DC Current Gain
Transition Frequency
Collector Capacitance
Emitter Capacitance
Feedback Capacitance
ICBO
hFE
fT
Cc
Ce
Cre
VCB = 10V, IE = 0
VCE = 10V, IC = 14mA
VCE = 10V, IC = 14mA, f = 500MHz
VCB = 10V, IE = Ie = 0, f = 1MHz
VEB = 0.5V, IC = Ic = 0, f = 1MHz
VCE = 10V, IC = 2mA, f = 1MHz,
TA = +25°C
– – 50 nA
25 50 –
– 5 – GHz
– 0.75 – pF
– 0.8 – pF
– 0.4 – pF



NTE2402
Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Noise Figure (At Optimum
Source Impedance)
Max. Unilateral Power Gain
(sre Assumed to be Zero)
Output Voltage
(At dim = 60dB)
F
GUM
VO
VCE = 10V, IC = 2mA, f = 500MHz,
TA = +25°C
VCE = 10V, IC = 2mA, f = 500MHz,
TA = +25°C, Note 2
VCE = 10V, IC = 14mA, RL = 75,
TA = +25°C, f(p+qr) = 493,25MHz
2.4 dB
18 dB
150 mV
Note 2. GUM = 10 log |sfe|2 / [1 |sie|2] [1 |soe|2].
.016 (0.48)
C .098
(2.5)
B E Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)







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