NPN Transistor. NTE2408 Datasheet

NTE2408 Transistor. Datasheet pdf. Equivalent

Part NTE2408
Description Silicon NPN Transistor
Feature NTE2408 Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2409) Description: Th.
Manufacture NTE
Datasheet
Download NTE2408 Datasheet




NTE2408
NTE2408
Silicon NPN Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2409)
Description:
The NTE2408 is a silicon NPN general purpose transistor in a SOT–23 type surface mount package
designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits.
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Peak Emitter Current, IEM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Peak Base Current, IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Power Dissipation (TA = +60°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 ° to +150°C
Thermal Resistance, Junction–to–Tab, RthJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Thermal Resistance, Tab–to–Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280K/W
Thermal Resistance, Soldering Points–to–Ambient (Note 1), RthSA . . . . . . . . . . . . . . . . . . . . 90K/W
Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
ICBO
VBE
VCE(sat)
VCB = 30V, IE = 0
VCB = 30V, IE = 0, TA = +150°C
VCE = 5V, IC = 2mA, Note 2
VCE = 5V, IC = 10mA, Note 2
IC = 10mA, IB = 0.5mA, Note 3
IC = 100mA, IB = 5mA, Note 3
Min Typ Max Unit
– – 15 nA
– – 5 µA
580 660 700 mV
– – 770 mV
– 90 250 mV
– 200 600 mV
Note 2. VBE decreases by about 2mV/K with increasing temperature.
Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature.



NTE2408
Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
BaseEmitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Capacitance
SmallSignal Current Gain
Noise Figure
VBE(sat)
hFE
fT
Cc
hfe
NF
IC = 10mA, IB = 0.5mA, Note 3
IC = 100mA, IB = 5mA, Note 3
VCE = 5V, IC = 10µA
VCE = 5V, IC = 2mA
VCE = 5V, IC = 10mA, f = 35MHz
VCB = 10V, IE = Ie = 0, f = 1MHz
VCE = 5V, IC = 2mA
VCE = 5V, IC = 200µA, f = 1kHz,
B = 200Hz
700 mV
900 mV
150 200
290 450
300 MHz
2.5 pF
125 500
2 10 dB
Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature.
.016 (0.48)
C .098
(2.5)
B E Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)