Complementary Transistors. NTE2418 Datasheet

NTE2418 Transistors. Datasheet pdf. Equivalent

Part NTE2418
Description Silicon Complementary Transistors
Feature NTE2418 (NPN) & NTE2419 (PNP) Silicon Complementary Transistors Digital w/2 Built–In Bias 47k Resist.
Manufacture NTE
Datasheet
Download NTE2418 Datasheet




NTE2418
NTE2418 (NPN) & NTE2419 (PNP)
Silicon Complementary Transistors
Digital w/2 Built–In Bias 47k Resistors
(Surface Mount)
Features:
D Built–In Bias Resistors
D Small SOT–23 Surface Mount Package
Applications:
D Switching Circuits
D Inverters
D Interface Circuits
D Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
ICBO VCB = 40V, IE = 0
ICEO VCE = 40V, IB = 0
Emitter Cutoff Current
IEBO VEB = 5V, IC = 0
DC Current Gain
hFE VCE = 5V, IC = 10mA
Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0
Collector–Emitter Breakdown Voltage V(BR)CBO IC = 100µA, RBE =
Collector–Emitter Saturation Voltage VCE(sat) IC = 5mA, IB = 0.25mA
Current Gain–Bandwidth Product
NTE2418
fT
VCE = 10V, IC = 5mA
NTE2419
Min Typ Max Unit
– – 0.1 µA
– – 0.5 µA
30 53 80 µA
50 – –
50 – – V
50 – – V
– 0.1 0.3 V
– 250 – MHz
– 200 – MHz



NTE2418
Electrical Characteristics (Contd): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
NTE2418
NTE2419
Cob
VCB = 10V, f = 1MHz
3.5 pF
5.3 pF
Input OFF Voltage
Input ON Voltage
Input Resistance
Input Resistance Ratio
VI(off)
VI(on)
R1
R1/R2
VCE = 5V, IC = 100µA
VCE = 0.2V, IC = 10mA
0.8 1.1 1.5 V
1.0 2.5 5.0 V
32 47 62 k
0.9 1.0 1.1
Output
NPN
PNP Output
Input
Input
GND
.016 (0.48)
GND
C .098
(2.5)
B E Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)







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